The National Memory Project of the hottest electro

2022-08-05
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Electronic components industry: the National Memory Project was launched recently, the official of Ziguang group announced that the national memory base project (hereinafter referred to as the "project") jointly invested and constructed by Ziguang group in conjunction with the national integrated circuit industry fund, Hubei provincial local fund and Hubei Provincial Science and Technology Investment Co., Ltd. was officially started in Wuhan East Lake high tech Zone. Recently, the official of Ziguang group announced that the national memory base project (hereinafter referred to as the project) jointly invested and constructed by Ziguang group, the national integrated circuit industry fund, Hubei provincial local fund and Hubei Provincial Science and Technology Investment Co., Ltd. has officially started construction in Wuhan East Lake high tech Zone. The total investment of the project is US $24billion. It mainly produces memory chips, covering a total area of 1968 mu. Three 3D NAND flash Fab plants with the largest single clean area in the world, one headquarters R & D building and several other supporting buildings will be built. The first phase of the project is planned to be completed and put into operation in 2018, and the whole project will be completed in 2020. The total production capacity will reach 300000 chips/month, and the annual output value will exceed US $100billion so far

memory chips are one of the three categories of integrated circuits. They are widely used in memory, USB flash disk, consumer electronics, intelligent terminal, solid-state storage hard disk and other fields. Their sales account for more than 25% of the whole chip industry. Their technology can fully reflect the development level of semiconductors in a country or region. According to the data of CCID Consulting, in 2014, China's memory chip market reached 246.55 billion yuan, accounting for 23.7% of the domestic integrated circuit market share. Almost 100% of domestic memory chips are imported, and the amount of imported memory chips is up to US $60billion every year. According to trendforce data, in 2016, Q3 Samsung Electronics' share in the global DRAM memory field reached 50.2%, and SK Hynix's share reached 24.8%; Samsung Electronics' market share in the global NAND flash field is 36.6%, and SK Hynix accounts for 10.4%

the experimental conditions are set through the operating panel or computer software. The project will take the memory chip manufacturing link as a breakthrough to form an IDM mode covering the whole industrial chain of memory chip design, manufacturing, packaging and testing, technology research and development, and provide effective support for the transformation and upgrading of the domestic electronic information industry. We believe that the launch of the project will achieve a breakthrough in domestic memory chips from 0 to 1, fill the gap in the domestic memory industry, and show that the implementation of the national integrated circuit industry development strategy in the memory chip field will effectively ensure the national information security

from the development history of semiconductors in Japan and South Korea, the Japanese government organized five largest semiconductor manufacturers from 1976 to 1979. Among them, manufacturers formed integrated circuit research teams and invested a lot of money and manpower. In 1980, 64kdram memory (half a year earlier than the United States) and 256kdram memory (two years earlier than the United States) were developed; In the late 1980s, the Korean government took the memory as a breakthrough, formed a DRAM memory R & D team integrating the government and the people, and invested a lot of resources to break through the memory technology. In 1994, Samsung Electronics took the lead in launching 256M DRAM in the world, and then the Korean semiconductor industry surpassed Japan to become the first in the world

aiming at 3D NAND flash in the emerging field of memory, it is expected to accelerate the breakthrough of technical bottleneck by cooperating with feisuo semiconductor and concentrating resources on advanced memory technology. As a new memory technology, 3D NAND flash has the advantages of smaller size, larger capacity and lower cost compared with 2D NAND flash because its evolution logic relies on 3D chip stacking rather than process reduction. We believe that the project takes 3D NAND flash memory as a breakthrough, with a high starting point and large investment. With the strong support of the state, it is expected to break through the technical bottleneck related to memory and achieve mass production

the construction of the project will drive the development of domestic semiconductor equipment and materials industry

the demand for semiconductor equipment and materials is mainly driven by the construction of new semiconductor wafer factories. Etcher, PVD, CVD and other semiconductor equipment have been partially localized, and materials such as electronic plating solution and electronic cleaning solution have been supplied to major semiconductor manufacturers in China. We believe that the construction of the project will promote the development of domestic semiconductor equipment and materials industry

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